Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-24T14:49:22.852Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhanced Diffusion of High-Temperature Implanted Aluminum in Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

A V. Suvorov ,
I.O. Usov ,
V.V. Sokolov  and
A.A. Suvorova
A V. Suvorov
Affiliation:
Cree Research Inc., Durham, NC 27713, USA, asuvorov@cree.com Physical Technical Institute RAS, St. Petersburg, 194021, Russia
I.O. Usov
Affiliation:
Physical Technical Institute RAS, St. Petersburg, 194021, Russia
V.V. Sokolov
Affiliation:
Physical Technical Institute RAS, St. Petersburg, 194021, Russia
A.A. Suvorova
Affiliation:
Physical Technical Institute RAS, St. Petersburg, 194021, Russia
Get access

Abstract

The diffusion of aluminum in silicon carbide during high-temperature A1+ ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1800 °C with 40 keV Al ions to a dose of 2 x 1016 cm-2. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be Di = 2.8 x 10-12 cm2/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 239
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Edmond, J.A., Withrow, S.P., Wadlin, W., and Davis, R.F., in Interfaces , Superlattices, and Thin Films, edited by Dow, John D. and Schuller, Ivan K. (Mater. Res. Soc. Proc. 77, Pittsburg, PA, 1987), pp. 193–198.Google Scholar
2 Suttrop, W., Zhang, H., Schadt, M., Pensl, G., Dohuke, K. and Leibenzeder, S. in Amorphous and Crystalline Silicon Carbide IV, edited by Yang, C.Y., Rahman, M.M. and Harris, G.L. (Springer Proceeding in Physics 71, Springer-Verlag Berlin Heidelberg, 1992) pp. 143–148.Google Scholar
3 Aleksandrov, P.A., Baranova, E.K., Beloshitskii, V.V., Demakov, K.D. and Starostin, V.A., Rad Effects 88, 249 (1986).Google Scholar
4 Cree Research Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713, USA.Google Scholar
5 Miwa, S., Nomachi, I., Kobavsani, H., Adsai, H. and Ohladi, H., in Secondary Ion Mass Spectrometry SIMS IX, edited by Benninghoven, A., Nihei, Y., Shimizu, R. and Werner, H.W (John Wiley & Sons, England, 1994), pp. 706–709.Google Scholar
6 Colby, J.W., in Practical Scanning Electron Microscopy, edited by Goldstein, J.I. and Yakowitz, H. (Plenum, New York, 1975), p. 529.Google Scholar
7 Makarov, V.N., Plotkin, D.A., Suvorov, A.V., in Silicon Carbide and Related Materials, edited by M.G. Spencer, , R.P. Devaty, , Edmond, J.A., Asif Kaplan, M. and Rahman, M. (Institute of Physics Publishing, Bristol and Philadelphia, 1994) pp.545–547.Google Scholar
8 Ahmed, S., Barbero, C.J., Sigmon, T.W. and Erickson, J.W., Appl. Phys. Lett., 65(1), 67 (1994).Google Scholar
9 Suvorov, A.V., Ivanov, P.A., Morozenko, Y.V., Makarov, V.N., Third All-Union Conference on Wide-Gap Semiconductors (in Russian), Mahachkala, 28 (1986).Google Scholar
10 Strack, H., J.Appl.Phys., 34(8), 2405 (1963).Google Scholar
11 Tajima, Yo, Kijima, Kazunori, and Kingery, W.D., J.Chem.Phys. 77(5), 2592 (1982).Google Scholar