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Enhanced Adhesion From High Energy Ion Irradiation

Published online by Cambridge University Press:  15 February 2011

B. T. Werner ,
T. Vreeland Jr. ,
M. H. Mendenhall ,
Y. Qui  and
T. A. Tombrello
B. T. Werner
Affiliation:
California Institute of Technology, Pasadena, CA 91125, (U.S.A.)
T. Vreeland Jr.
Affiliation:
California Institute of Technology, Pasadena, CA 91125, (U.S.A.)
M. H. Mendenhall
Affiliation:
California Institute of Technology, Pasadena, CA 91125, (U.S.A.)
Y. Qui
Affiliation:
California Institute of Technology, Pasadena, CA 91125, (U.S.A.)
T. A. Tombrello
Affiliation:
California Institute of Technology, Pasadena, CA 91125, (U.S.A.)
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Abstract

We have found that irradiation of a variety of thin film–substrate combinations by heavy ion beams at energies of mega-electronvolts per atomic mass unit will produce a remarkable enhancement in the adherence of the film. For example, gold films can be firmly attached to soft materials such as Teflon using a 1 MeV beam of protons (1014 cm−2) or helium ions (1013 cm−2) and to harder materials such as silicon (1015 cm−2), quartz (2×1015 cm−2) and tungsten (2×1014 cm−2) with 0.5 MeV a.m.u.−1 beams of fluorine or chlorine ions. In the case of metal films on semiconductors a low resistance contact results. The mixed layer at the interface is observed to be quite thin (approximately 50 Å or less); for silver on silicon electron diffraction and imaging studies of the interface region reveal the presence of crystalline silver compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 163
Copyright
Copyright © Materials Research Society 1982

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References

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