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Energy Dependent Growth Rates of AIN using Pulsed Supersonic Jets

Published online by Cambridge University Press:  10 February 2011

V. W. Ballarotto  and
M. E. Kordesch
V. W. Ballarotto
Affiliation:
Department of Physics and Condensed Matter & Surface Science Program, Ohio University, Athens OH 45701–2979
M. E. Kordesch
Affiliation:
Department of Physics and Condensed Matter & Surface Science Program, Ohio University, Athens OH 45701–2979
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Abstract

AIN films were grown on Si< 100 >, using unskimmed pulsed supersonic jets of ammonia and trimethylaluminum (TMA). By seeding the ammonia gas in hydrogen or helium, several different energies of the N precursor were used to examine the effect of N kinetic energy on the growth rate of AIN. The energy of the Al precursor, TMA, was 130 meV in all cases. The highest growth rate (0.115 μm/hr) was achieved with the high energy ammonia jet. The role of number density on film growth is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 319
Copyright
Copyright © Materials Research Society 1998

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References

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