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Elevated And Room Temperature Mechanical Behavior Of Boron Doped NiAl Alloys

Published online by Cambridge University Press:  01 January 1992

Yi Tan
Affiliation:
On leave from Department of Materials Engineering, Dailian University of Technology, Dailian, China
Tetsumori Shinoda
Affiliation:
0n leave from Hitachi Research Laboratory, Hitachi Ltd., Saiwai-cho, Hitachi-shi, Ibaraki 317, Japan
Yoshinao Mishima
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 227, Japan.
Tomoo Suzuki
Affiliation:
Department of Metallurgical Engineering, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
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Abstract

The effects of boron addition on defect hardening at room temperature and on high temperature creep properties are investigated In the B2 NiAl intermetallic compound. It is found that boron addition is effective in increasing the room temperature hardness on the Ni-rich side but has no effect on the Al-rich side of stoichiometry. These observations are attributed to interstitial dissolution of boron in Ni-rich NiAl and due to a lack of solubility, and consequently an enrichment at grain boundaries on the Al-rich side. The similar effect is found for high temperature creep resistance of NiAl by boron addition, where it is increased at Ni-rich side but is unaffected at Al-rich side of offstoiciometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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