Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T07:51:36.785Z Has data issue: false hasContentIssue false
  • English
  • Français

Electro-resistive Memory Effect in Colossal Magnetoresistive Films and Performance Enhancement by Post-annealing

Published online by Cambridge University Press:  17 March 2011

Shangqing Liu ,
Naijuan Wu ,
Alex Ignatiev ,
Gustavo Tavizon  and
Christina Papagianni
Shangqing Liu
Affiliation:
Space Vacuum Epitaxy Center, Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5507, USA
Naijuan Wu
Affiliation:
Space Vacuum Epitaxy Center, Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5507, USA
Alex Ignatiev
Affiliation:
Space Vacuum Epitaxy Center, Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5507, USA
Gustavo Tavizon
Affiliation:
Space Vacuum Epitaxy Center, Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5507, USA
Christina Papagianni
Affiliation:
Space Vacuum Epitaxy Center, Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204-5507, USA
Get access

Abstract

Colossal magnetoresistive thin films have shown a large electric-pulse-induced resistivity change effect in zero magnetic field and at room temperature. The resistance of such films can be both decreased and increased through multiple nonvolatile intermediate levels by short electrical pulses. The effect provides a potential to develop a novel nonvolatile memory with high density, fast speed, and low power-consumption. An example of this effect has been seen for Pr0.7Ca0.3MnO3 films within which the thermal behavior of the film revealed a method for signal enhancement through annealing. An increase of 700% of the resistance ratio has been demonstrated for a film annealed at 170oC for 30 min. The effect is also observed to be active at room temperature but inefficient at low temperatures, which is interestingly contrary to the behavior of the colossal magnetoresistance effect and provides a clue to understanding the effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P3.26
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Xiong, G. C., Li, Q., Ju, H. L., Bhagat, S. M., Lofland, S. E., Greene, R. L., and Venkatesan, T., Appl. Phys. Lett. 67, 3031 (1995).Google Scholar
2. Tomioka, Y., Asamitsu, A., Kuwahara, H., Moritomo, Y., and Tokura, Y., Phys. Rev. B. 53, R1689 (1996).Google Scholar
3. Isaac, S. P., Mathur, N. D., Evetts, J. E., and Blamire, M. G., Appl. Phys. Lett. 72, 2038 (1998).Google Scholar
4. Hwang, H. Y., Cheong, S.-W., and Batlogg, B., Appl. Phys. Lett. 68, 3494 (1996).Google Scholar
5. Kobayashi, K.-I., Kimura, T., Sawada, H., Terakura, K., and Tokura, Y., Nature 395, 677 (1998).Google Scholar
6. Cadieu, F. J., Chen, L., Li, B., and Theodoropoulos, T., Appl. Phys. Lett. 75, 3369 (1999).Google Scholar
7. Liu, S. Q., Wu, N. J., and Ignatiev, A., Appl. Phys. Lett. 76, 2749 (2000).Google Scholar
8. Ishiwara, H., Jpn. J. Appl. Phys. 32, P1 1B 442 (1993).Google Scholar
9. Dax, M., Semiconductor International, Sep., 84 (1997).Google Scholar
10. Asamitsu, A., Tomioka, Y., Kuwahara, H., and Tokura, Y., Nature 388, 50 (1997).Google Scholar
11. Ponnambalam, V., Parashar, Sachin., Raju, A. R., and Rao, C. N. R., Appl. Phys. Lett. 74, 207 (1999).Google Scholar
12. Ogale, S. B., Talyansky, V., Chen, C. H., Ramesh, R., Greene, R. L., and Venkatesan, T., Phys. Rew. Lett. 77, 1159 (1996).Google Scholar
13. Uehara, M., Mori, S., Chen, C. H., and Cheong, S.–W., Nature 399, 560 (1999).Google Scholar
14. Nonvolatile Semiconductor Memory Technology, edited by Brown, W. D., and Brewer, J. E., IEEE Press, New York, 1998.Google Scholar