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Electroplated Cu Recrystallization in Damascene Structures at Elevated Temperatures

Published online by Cambridge University Press:  10 February 2011

Qing-Tang Jiang ,
Michael E. Thomas ,
Gennadi Bersuker ,
Brendan Foran ,
Robert Mikkola ,
Brad Carpenter  and
John Ormando
Qing-Tang Jiang
Affiliation:
National Semiconductor Inc., 2900 Semiconductor Dr., Santa Clara, CA 95052.
Michael E. Thomas
Affiliation:
National Semiconductor Inc., 2900 Semiconductor Dr., Santa Clara, CA 95052.
Gennadi Bersuker
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741.
Brendan Foran
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741.
Robert Mikkola
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741. APRDL, Motorola Inc., 3501 Ed Bluestein Boulevard, Austin, TX 78721.
Brad Carpenter
Affiliation:
Semitool Inc., 655 West Reserve Dr., Kalispell, MT 59901.
John Ormando
Affiliation:
Sematech, 2706 Montopolis Dr., Austin, TX 78741. Intel, 3065 Bowers Ave., Santa Clara, CA 95054.
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Abstract

Transformations in electroplated Cu films from a fine to course grain crystal structure (average grain sizes went from ∼0.1 µm to several microns) were observed to strongly depend on film thickness and geometry. Thinner films underwent much slower transformations than thicker ones. A model is proposed which explains the difference in transformation rates in terms of the physical constraint experienced by the film since grain growth in thinner films is limited by film thickness. Geometrical constraints imposed by trench and via structures appear to have an even greater retardation effect on the grain growth. Experimental observations indicate that it takes much longer for Cu in damascene structures to go through grain size transformations than blanket films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 429
Copyright
Copyright © Materials Research Society 1999

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References

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