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Electronic Structures and Nature of Host Excitation in Gallates

Published online by Cambridge University Press:  21 March 2011

P. C. Schmidt ,
J. Sticht ,
M. Stephan ,
V. Eyert  and
K. C. Mishra
P. C. Schmidt
Affiliation:
Institut für Physikalische Chemie, Technische Universität Darmstadt, Darmstadt, Germany
J. Sticht
Affiliation:
Institut für Physikalische Chemie, Technische Universität Darmstadt, Darmstadt, Germany
M. Stephan
Affiliation:
Institut für Physikalische Chemie, Technische Universität Darmstadt, Darmstadt, Germany
V. Eyert
Affiliation:
Institut für Physik, Universität Augsburg, Augsburg, Germany
K. C. Mishra
Affiliation:
Research and Development, OSRAM SYLVANIA, Beverly, MA
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Abstract

It is an interesting exercise in materials science to explore simple rules relating the electronic properties of ternary systems to those of their binary constituents. In the present work, we have investigated the electronic structures of the large band gap gallates MGa2O4(M=Mg, Ca, Ba and Zn) and the corresponding binary oxides MO and Ga2O3. Using first-principles band structure methods, we find that the metal atoms in MO control the width of the O 2p-like valence band and the size of the optical band gap. Covalent metal-oxygen bonding is much more pronounced in Ga2O3 and leads to characteristic structure in the valence band density of states. These basic features are retained in the ternary compounds where the covalent admixture to the chemical bond is largest between Ga and O, and the transitions across the band gap involve the Ga2O3 sublattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G1.2
Copyright
Copyright © Materials Research Society 2001

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