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Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors
Published online by Cambridge University Press: 26 February 2011
Abstract
An empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.
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- Copyright © Materials Research Society 1992
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