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Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

Published online by Cambridge University Press:  01 January 1993

T.J. Mc Mahon  and
Y. Xiao
T.J. Mc Mahon
Affiliation:
NREL, Golden, CO 80401, USA.
Y. Xiao
Affiliation:
NREL, Golden, CO 80401, USA. Univ. of Colorado, Boulder, CO 80309.
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Abstract

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 213
Copyright
Copyright © Materials Research Society 1993

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References

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