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Electron Mobility of N-Type GaN Films

Published online by Cambridge University Press:  10 February 2011

H. M. Ng ,
D. Doppalapudi ,
R. Singh  and
T. D. Moustakas
H. M. Ng
Affiliation:
hmng@bu.edu
D. Doppalapudi
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
R. Singh
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
T. D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
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Abstract

The lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy (ECR-MBE) doped n-type with Si to the levels of 1015 − 1020 cm−3 was investigated. The room temperature electron mobility vs carrier concentration was found to follow a family of bell-shaped curves consistent with a recently proposed model in which dislocations with an edge component introduce acceptor centers along the dislocation lines which capture electrons from the conduction band in n-type GaN. The mechanism of scattering was investigated by studying the temperature dependence of the carrier concentration and electron mobility. We found that for the samples with high carrier concentration (> 1018cm−3), the scattering at low temperatures is dominated by impurities while for samples with low carrier concentration (<1017 cm−3), the scattering is dominated by charged dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 507
Copyright
Copyright © Materials Research Society 1998

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Footnotes

a)

Now with Polaroid Corporation, Norwood, MA.

References

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