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Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage
Published online by Cambridge University Press: 22 February 2011
Abstract
In the narrow, confined metal interconnects used in the chip level, electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Recently there has been a growing concern on the effects of preceding stress-migration on the subsequent electromigration damage. We present here an electromigration model, which is able to address the effects of stress-migration and mechanical stresses on electromigration lifetime.
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- Copyright © Materials Research Society 1992
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