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Electromigration Damage by Current Induced Coalescence of Thermal Stress Voids

Published online by Cambridge University Press:  22 February 2011

P. Børgesen ,
M. A. Korhonen ,
T. D. Sullivan ,
D. D. Brown  and
C.-Y. Li
P. Børgesen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
M. A. Korhonen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
T. D. Sullivan
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
D. D. Brown
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, 14853, NY
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Abstract

According to a new electromigration model, small thermal stress induced voids remain trapped at grain and phase boundaries, growing under an electric current. When they reach a ‘threshold’ size, migration and coalescence leads to rapid line failure. Predictions are compared to experimental results for Al, Al(0.6%Si), and Al(1.6%Cu) lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 683
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Børgesen, P., Li, C.-Y., Korhonen, M. A., and Brown, D. D., Proc. 1st Int. Workshop on Stress Induced Phenomena in Metallizations (Ithaca, Sept. 1991)Google Scholar
2. Li, C.-Y., Børgesen, P., and Korhonen, M. A., to be publishedGoogle Scholar
3. Yue, J. T., Funsten, W. P., and Taylor, R. V., Proc. 23rd Int. Reliab. Phys. Symp. (IEEE, New York, 1985) 126 Google Scholar
4. Børgesen, P., Lee, J. K., Gleixner, R., and Li, C.-Y., submitted to Appl. Phys. Lett.Google Scholar
5. Brown, D. D., Børgesen, P., Lilienfeld, D. A., Korhonen, M. A., and Li, C.-Y., this symposiumGoogle Scholar
6. Ho, P. S., J. Appl. Phys. 41 (1970) 64 CrossRefGoogle Scholar
7. Li, C.-Y., Børgesen, P., and Sullivan, T. D., Appl. Phys. Lett. 59 (1991) 1464 CrossRefGoogle Scholar
8. Korhonen, M. A., Børgesen, P., Tu, K.-N., and Li, C.-Y., to be publishedGoogle Scholar
9. Ryan, J. G., Riendeau, J. B., Shore, S. E., Slusser, G. J., Slusser, D. C., Beyar, D. C., Bouldin, D. P., and Sullivan, T. D., J. Vac. Sci. Technol. A8 (1990) 1474 CrossRefGoogle Scholar
10. Kaur, I., Gust, W., and Kozma, L., “Handbook of Grain and Interphase Boundary Diffusion Data” (Ziegler Press, Stuttgart, (1989)Google Scholar
11. Levine, E. and Kitcher, J., Proc. 22nd Int. Reliab. Phys. Symp. (1984) 242 CrossRefGoogle Scholar
12. Black, J. R., IEEE Trans. Electron Devices ED–16 (1969) 338 CrossRefGoogle Scholar