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Electroluminescence Characteristics of Inorganic (p-GaN/MgO)-Organic (Alq3) Hybrid p-n Junction Light Emitting Diodes

Published online by Cambridge University Press:  02 March 2011

Akihiko Kikuchi  and
Tomoyuki Tsuji
Akihiko Kikuchi
Affiliation:
Department of Engineering and Applied Sciences, Sophia University, 7-1, Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
Tomoyuki Tsuji
Affiliation:
Department of Engineering and Applied Sciences, Sophia University, 7-1, Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Abstract

Inorganic/organic hybrid light-emitting diodes (LEDs) (IO-HyLEDs) composed of p-type GaN/n-type Tris-(8-hydoroxyquinoline) aluminum (Alq3) were fabricated with and without thin MgO electron-blocking layer (EBL) at the inorganic/organic interface. These LEDs showed clear and stable current rectifying diode characteristics and electroluminescence (EL) peaked at UV region at room temperature. For the sample with MgO-EBL, obvious enhancement of green emission from Alq3 layer was observed. This result suggests that due to effective suppression of electron transport from Alq3 to p-GaN by MgO-EBL, radiative recombination of electrons and holes in Alq3 layer was enhanced. It was indicated that the band engineering technique can be applied to control the emission property of inorganic/organic hybrid LED.

Keywords

nitrideoptoelectronicorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1286: Symposium E – Molecular and Hybrid Materials for Electronics and Photonics , 2011 , mrsf10-1286-e03-38
Copyright
Copyright © Materials Research Society 2011

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References

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