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Electro- and Photoluminescence from Ultrathin SImGEn Superlattices

Published online by Cambridge University Press:  15 February 2011

H. Presting ,
U. Menczigar ,
G. Abstreiter ,
H. Kibbel  and
E. Kasper
H. Presting
Affiliation:
Daimler Benz Research Center, D-7900 Ulm, F.R.G.
U. Menczigar
Affiliation:
Technical University of Munich, D-8046 Garching, F.R.G
G. Abstreiter
Affiliation:
Technical University of Munich, D-8046 Garching, F.R.G
H. Kibbel
Affiliation:
Daimler Benz Research Center, D-7900 Ulm, F.R.G.
E. Kasper
Affiliation:
Daimler Benz Research Center, D-7900 Ulm, F.R.G.
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Abstract

P-i-n doped short-period SimGen strained layer superlattices (SLS) are grown on (100) silicon substrates by low temperature molecular beam epitaxy (300C°<∼Tg<∼400C°). The SLS's are grown with period lengths around 10 monolayers (ML) to a thickness of 250nm on a rather thin (50nm) homogeneous Si1−ybGeyb alloy buffer layer serving as strain symmetrizing substrate. Photoluminescence at T=5K is observed for various SimGen SLS samples, the strongest signal was found for a Si5 Ge5 SLS. Samples with identical SLS's but different buffer layer composition and thicknesses are grown to study the influence of strain on the PL. Electroluminescence (EL) at the same energy range is observed from mounted SimGen SLS mesa and waveguide diodes up to T=130K – for the first time reported in strain symmetrized short-period SimGen SLS. The intensity and peak positon of the EL signal was found to be dependent on the injected electrical power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 83
Copyright
Copyright © Materials Research Society 1992

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References

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