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Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

Published online by Cambridge University Press:  03 September 2012

A. Saxler ,
P. Debray ,
R. Perrin ,
S. Elhamri ,
W. C. Mitchel ,
C.R. Elsass ,
I.P. Smorchkova ,
B. Heying ,
E. Haus  and
P. Fini
...Show all authors
A. Saxler
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, Ohio 45433-7707
P. Debray
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, Ohio 45433-7707 Permanent address: Service de Physique de l'Etat Condensé, Centre d'Etudes de Saclay, F-91191 Gif-sur-Yvette Cedex, France
R. Perrin
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, Ohio 45433-7707
S. Elhamri
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, Ohio 45433-7707 Permanent address: Department of Physics, University of Dayton, Dayton, OH 45469
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPO, Wright-Patterson AFB, Ohio 45433-7707
C.R. Elsass
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
I.P. Smorchkova
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
B. Heying
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
E. Haus
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
P. Fini
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
J.P. Ibbetson
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
S. Keller
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
P.M. Petroff
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
S.P. DenBaars
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
U.K. Mishra
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
J.S. Speck
Affiliation:
College of Engineering, University of California, Santa Barbara, CA 93106
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Abstract

An AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm-2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10-12 s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.10
Copyright
Copyright © Materials Research Society 1999

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