Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-24T00:23:46.652Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties and Figures of Merit for New Chalcogenide-Based Thermoelectric Materials

Published online by Cambridge University Press:  15 February 2011

Jon L. Schindler ,
Tim P. Hogan ,
Paul W. Brazis ,
Carl R. Kannewurf ,
Duck-Young Chung  and
Mercouri G. Kanatzidis
Jon L. Schindler
Affiliation:
CMRC-Display Technologies Group, Motorola, Inc., Schaumburg, IL 60196
Tim P. Hogan
Affiliation:
Department of Physics, University of Houston, Houston, TX 77204–5506
Paul W. Brazis
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
Carl R. Kannewurf
Affiliation:
Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208–3118
Duck-Young Chung
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824–1322
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824–1322
Get access

Abstract

New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈ +110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈ 240 S/cm, but a larger n-type thermopower ≈ −200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈ 0.32 at 260 K and for β-K2Bi8Se13 ZT ≈ 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 478: Symposium Q – Thermoelectric Materials - New Directions and Approaches , 1997 , 327
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Tritt, T., Science, vol.272, no. 5266, pp. 1276–1277, 1996.Google Scholar
[2] Mahan, G., Sales, B., and Sharp, J., Physics Today, March, 1997, pp. 42–47.Google Scholar
[3] Slack, G. A., in CRC Handbook of Thermoelectrics, edited by Rowe, D. M., (CRC Press, Boca Raton, FL, 1995), pp. 407–440.Google Scholar
[4] Kanatzidis, M. G. and Sutorik, A. C., in Progress in Inorganic Chemistry, vol.43, 1996, pp. 151–265.Google Scholar
[5] Kaibe, H., Tanaka, Y., Sakata, M., and Nishida, I., J. Phys. Chem. Solids, vol.50, no. 9, pp. 945–950, 1989.Google Scholar
[6] Jeon, H.-W., Ha, H.-P., Hyun, D.-B., and Shim, J.-D., J. Phys. Chem. Solids, vol.52, no. 4, pp. 579–585, 1991.Google Scholar
[7] CRC Handbook of Thermoelectrics, edited by Rowe, D. M., (CRC Press, Boca Raton, FL, 1995).Google Scholar
[8] Chung, D.-Y., Hogan, T., Schindler, J., lordanidis, L., Brazis, P., Kannewurf, C. R., Chen, B., Uher, C., Kanatzidis, M. G., Thermoelectric Materials – New Directions and Approaches, edited by Kanatzidis, M. G., Lyon, H., Mahan, G., and Tritt, T., (Mater. Res. Soc. Proc. 478, San Francisco, CA, 1997).Google Scholar
[9] Chung, D.-Y., Choi, K.-S., lordanidis, L., Schindler, J. L., Brazis, P. W., Kannewurf, C. R., Chen, B., Uher, C., and Kanatzidis, M. G., (in preparation).Google Scholar
[10] Lyding, J. W., Marcy, H. O., Marks, T. J., and Kannewurf, C. R., IEEE Trans. Instrum. Meas., vol.37, no. 1, pp. 76–80, 1988.Google Scholar
[11] Marcy, H. O., Marks, T. J., and Kannewurf, C. R., IEEE Trans. Instrum. Meas., vol.39, no. 5, pp. 756–760, 1990.Google Scholar
[12] Hogan, T. P., Ph.D. thesis, Northwestern University, 1996.Google Scholar
[13] Maldonado, O., Cryogenics, vol.32, no. 10, pp. 908–912, 1992.Google Scholar
[14] Marlow Industries, Inc., Reference data for Bi2Te3 samples, (1995).Google Scholar
[15] Kanatzidis, M. G., McCarthy, T. J., Tanzer, T. A., Chen, L.-H., Iordanidis, L., Hogan, T., Kannewurf, C. R., Uher, C., and Chen, B., Chem. Mater., vol.8, no. 7, pp. 1465–1474, 1996.Google Scholar
[16] Ioffe, A. F., Semiconductor Thermoelements and Thermoelectric Cooling, (Infosearch Limited, London, 1957), pp. 44–46.Google Scholar