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Electrical profiles of ultra-low energy antimony implants in silicon

Published online by Cambridge University Press:  17 March 2011

T. Alzanki ,
R. Gwilliam ,
N. Emerson ,
B. J. Sealy  and
E. Collart
T. Alzanki
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
R. Gwilliam
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
N. Emerson
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
B. J. Sealy
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
E. Collart
Affiliation:
Applied Materials UK Ltd., Parametric and Conductive Implant Division, Foundry Lane, Horsham, W-Sussex, RH13 5PX, UK
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Abstract

A novel Differential Hall Effect technique is used to obtain doping profiles of 2keV implants of antimony in <100> silicon at a depth resolution of 2nm. The electrical profiles are compared with atomic profiles determined from Secondary Ion Mass Spectroscopy (SIMS) measurements. We demonstrate good consistency between the two profiling techniques and confirm that the SIMS profiles can be used to identify the junction depth. The profiles show that antimony does not diffuse significantly for annealing temperatures below 800°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C5.7
Copyright
Copyright © Materials Research Society 2004

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References

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