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Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. W. Huang ,
H. Lu ,
J. G. Cederberg ,
I. Bhat  and
T. F. Kuech
J. W. Huang
Affiliation:
Chemical Engineering Depaurtment, University of Wisconsin, Madison, WI 53706
H. Lu
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
J. G. Cederberg
Affiliation:
Chemical Engineering Depaurtment, University of Wisconsin, Madison, WI 53706
I. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
T. F. Kuech
Affiliation:
Chemical Engineering Depaurtment, University of Wisconsin, Madison, WI 53706
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Abstract

We have applied frequency-dependent capacitance measurements and admittance spectroscopy on metalorganic vapor phase epitaxy GaN:Mg to study the electronic states associated with Mg doping. Samples with different Mg doping levels were grown and annealed in nitrogen. Lateral dot-and-ring Schottky diodes using Au/Ti were fabricated. After a 800 °C anneal, frequency-dependent measurements show that the capacitance is reduced at a higher frequency, most likely due to the inability of a deep center to maintain an equilibrium ionization state under a high frequency modulation. The net ionized acceptor concentrations was found to be greater at a higher Mg doping level. Admittance spectroscopy, in which the conductance is monitored as a function of temperature, verifies the existence of at least one impurity-related acceptor level with an activation energy of ∼ 140 meV. A reduction in the annealing temperature was found to lead to a lower net ionized acceptor concentration, as well as a higher activation energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 601
Copyright
Copyright © Materials Research Society 1996

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