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Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  10 February 2011

P.N.K. Deenapanray ,
F.D. Auret ,
M.C. Ridgway ,
S.A. Goodman  and
G. Myburg
P.N.K. Deenapanray
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200pnk109@rsphysse.anu.edu.au
F.D. Auret
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200pnk109@rsphysse.anu.edu.au
S.A. Goodman
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002
G. Myburg
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002
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Abstract

We report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 519
Copyright
Copyright © Materials Research Society 1998

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