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Electrical and Structural Properties of Ta-doped SnO2 Transparent Conductive Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  20 March 2014

Shoichiro Nakao
Affiliation:
Kanagawa Academy of Science and Technology (KAST) 3-2-1 Sakado, Kawasaki, Kanagawa 213-0012, Japan Japan Science and Technology Agency, CREST 7-3-1 Hongo, Tokyo 113-0033, Japan
Naoomi Yamada
Affiliation:
Department of Applied Chemistry, Chubu University 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
Yasushi Hirose
Affiliation:
Kanagawa Academy of Science and Technology (KAST) 3-2-1 Sakado, Kawasaki, Kanagawa 213-0012, Japan Japan Science and Technology Agency, CREST 7-3-1 Hongo, Tokyo 113-0033, Japan Department of Chemistry, The University of Tokyo 7-3-1 Hongo, Tokyo 113-0033, Japan
Tetsuya Hasegawa
Affiliation:
Kanagawa Academy of Science and Technology (KAST) 3-2-1 Sakado, Kawasaki, Kanagawa 213-0012, Japan Japan Science and Technology Agency, CREST 7-3-1 Hongo, Tokyo 113-0033, Japan Department of Chemistry, The University of Tokyo 7-3-1 Hongo, Tokyo 113-0033, Japan
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Abstract

We investigated electrical and structural properties of Ta-doped SnO2 (TTO) films on anatase TiO2 seed layers with various growth parameters of pulsed laser deposition. We found that anatase TiO2 seed layers induced pseudo-epitaxial (100) growth of TTO films with enhanced mobility (μ) in a wide range of growth parameters. The highest μ of 83 cm2V-1s-1 [resistivity (ρ) of 2.8 × 10-4 Ωcm] and the lowest ρ of 1.8 × 10-4 Ωcm (μ of 60 cm2V-1s-1) were obtained at a substrate temperature of 600 °C. Amorphization and (101)-preferred growth competed with (100) growth on the TiO2 seed layer at low temperatures. Introducing sufficient process oxygen suppressed such unwanted film growth, resulting in improved transport properties.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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