Hostname: page-component-84b7d79bbc-7nlkj Total loading time: 0 Render date: 2024-07-29T20:05:42.289Z Has data issue: false hasContentIssue false

Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

Published online by Cambridge University Press:  01 February 2011

Sung-Hoon Chung
Affiliation:
shchung@kpu.ac.kr, Korea Polytechnic University, Department of Nano-Optics, Shiheung 429-793, Korea, Republic of
Vladislav Vasilyev
Affiliation:
ywsong@kpu.ac.kr, Korea polytechnic university, nano-optics engineering, 2121, Jeongwang-dong, Shiheung, 429-793, Korea, Republic of, 82-31-8041-0714, 82-31-8041-0729
Evgeni Gorokhov
Affiliation:
vladislav_v_2000@yahoo.com, Korea Polytechnic University, Department of Nano-Optics, Shiheung, 429-793, Korea, Republic of
Yong-Won Song
Affiliation:
Gorokhov@kpu.ac.kr, Korea Polytechnic University, Department of Nano-Optics, Shiheung, 429-793, Korea, Republic of
Hyuk-Kyoo Jang
Affiliation:
hkjang@mecharonics.com, Mecharonics Co., Ltd., R&D Center, Pyontaek, 459-020, Korea, Republic of
Get access

Abstract

We investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 , Aaltonen, Alén, P., Ritala, M., Leskelä, M., Chem. Vap. Deposition, 9, 46 (2003).Google Scholar
2 Ritala, M., Leskelä, M., Nanotechnology, 10, 19 (1999).Google Scholar
3 Matsui, Y., Hiratani, M., Nabatame, T., Shimamoto, Y., Kimura, S., Electrochem. Solid-State Lett., 5, C18 (2002).Google Scholar
4 Smith, D. L., Thin-film deposition: principle & practice, Int’l ed. (McGraw-Hill, Singapore, 1995) p. 270.Google Scholar
5 Livingston, J. D., Electronic Properties of Engineering Materials: Mit Series in Materials Science and Engineering, (John Wiley & Sons, New York, 1998) chap. 1.Google Scholar
6 Oring, M., The Material Science of Thin Films, (Academic Press, San Diego, 1992) p. 456.Google Scholar
7 Hua, Y., Instrumentation Science & Technology, 32(2), 115 (2004).Google Scholar
8 Goldstein, J., Newbury, D., Joy, D., Lyman, C., Echlin, P., Lifshin, E., Sawyer, L., Michael, and J., Scanning Electron microscopy and X-ray microanalysis, 3rd. ed, (Kluwer Academic/Plenum Publishers, New York, 2003) chap.3.Google Scholar