Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-10T21:08:17.365Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Optical PROPERTIES OF Co ALLOYED ß-FeSi2 Formed by Ion Beam Synthesis

Published online by Cambridge University Press:  22 February 2011

D. Panknin ,
W. Henrion ,
E. Wieser ,
M. Voelskow ,
W. Skorupa  and
H. Vöhse
D. Panknin
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
W. Henrion
Affiliation:
POB 510119, D-01314 Dresden, Germany
E. Wieser
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
M. Voelskow
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
H. Vöhse
Affiliation:
Hahn-Meitner-Institute, Berlin, Institute Fresenius, Dresden
Get access

Abstract

By subsequent implantation of iron and cobalt into silicon buried layers of semiconducting ß-(Fe1-xCo1-x)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the suicide layers is characterized by XTEM images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 723
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lefki, K., Muret, P., Cherief, N. and Cinti, R., J. appl. Phys. 69 (1991) 352 Google Scholar
2 Raderaiacher, K., Carius, R. and Mantl, S.,.E-MRS 1993, May 4-7, Strasbourg, to be published in Nucl. Instr. and Methods BGoogle Scholar
3 Wieser, E., Panknin, D., Skorupa, W., Queraer, G., Henrion, W. and Albrecht, J., Nucl. Instr. and Methods B 80/81 (1993) 867 Google Scholar
4 Panknin, D., Eichhora, F., Wieser, E., Skorupa, W., Henrion, W. and Albrecht, J., E-MRS 1993, May 4-7 Strasbourg, to be published in Nucl. Instr. and Methods BGoogle Scholar
5 Tan, Z., Namavar, F., Heald, S.M. and Budnik, J.I. ,Appl. Phys. Letters 63 (1993), 791 Google Scholar
6 Radermacher, K., Mantl, S., Gertsen, D., Dieker, Ch. and Lüth, H., Nucl. Instr. and Methods B 80/81 (1993) 831 Google Scholar
7 Panknin, D., Wieser, E., Skorupa, W., Quemer, G., Vöhse, H. and J. Albrecht, Mat. Res. Symp. 279 (1993) 111 Google Scholar
8 Kressel, H. and Buttler, J.K. in “Semiconductor Lasers and Heterojunction LEDs”, Academic, New York 1977), p. 18 Google Scholar
9 Dimitriadis, C.A., Werner, J.H., Logothetidis, S., Stutzmann, M., Weber, J. and Nesper, R.; J. Appl. Phys. 68 (1990), 1726 Google Scholar
10 Christensen, N.E. , Phys. Rev. B 42 (1990) 7148 Google Scholar
11 Komabayashi, M., Nijikata, K.J. and Ido, E., Jap. J. Appl. Phys. 30 (1991) 331 Google Scholar