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Elecrically Detected Magnetic Resonance in A-SI:H Pin Cells

Published online by Cambridge University Press:  01 January 1993

Klaus Lips  and
Walther Fuhs
Klaus Lips
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Universitat Marburg, Renthof 5, D-3550 Marburg, Germany
Walther Fuhs
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Universitat Marburg, Renthof 5, D-3550 Marburg, Germany
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Abstract

We report on a detailed study of EDMR in pin-type solar cells. Like in films the signals are dominated by the contribution of the e-db resonance. It is found that the spectra depend on the applied bias and photon energy of the exciting light. The data suggest that the dark current is controlled by recombination in the bulk of the i-layer. The sign of the signal depends sensitively on the sign of the internal field. At high forward bias and illumination recombination at the pi-interface plays an important role. Degradation by both light exposure and high forward current results predominantly from an increase of the bulk defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 643
Copyright
Copyright © Materials Research Society 1993

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References

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