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EL-2 Defect Formation and Carbon Incorporation in GaAs grown by Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

R. Venkatasubramanian ,
J.M. Borrego  and
S.K. Ghandhi
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709;
J.M. Borrego
Affiliation:
Electrical Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180.
S.K. Ghandhi
Affiliation:
Electrical Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, NY 12180.
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Abstract

The anti-site defect AsGa, EL-2, is used to understand the nature of arsenic surface species during the Organometallic Vapor Phase Epitaxy(OMVPE) of GaAs. The concentration of EL-2 in unintentionally doped n-GaAs, measured by Deep Level Transient Spectroscopy, is presented as a function of AsH3 partial pressure, TMGa partial pressure and the growth temperature. Based on this data, a model for EL-2 incorporation in OMVPE GaAs is developed in which all surface species As-H, are converted to As2 at around 765 ° C. Under the same set of growth conditions, relative carbon levels measured by 4K Photoluminescence, suggest that the increase in carbon levels with growth temperature is due to the gas-phase loss of H radical from the As-H species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 831
Copyright
Copyright © Materials Research Society 1990

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