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Effects of Various Passivation Dielectrics and Via Reservoir Lengths on Stress and Electromigration Reliability of Metal Interconnects

Published online by Cambridge University Press:  21 March 2011

Young-Bae Park ,
Young-Ah Cho  and
Won-Gyu Lee
Young-Bae Park
Affiliation:
System IC R & D Center, Hynix semiconductor Inc., Cheongju, 360-480, Korea
Young-Ah Cho
Affiliation:
System IC R & D Center, Hynix semiconductor Inc., Cheongju, 360-480, Korea
Won-Gyu Lee
Affiliation:
System IC R & D Center, Hynix semiconductor Inc., Cheongju, 360-480, Korea
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Abstract

Reservoir length dependencies of electromigration lifetime in multilevel interconnect were compared for two passivation dielectrics, that is, FOX (Flowable Oxide) and HDP FSG (High Density Plasma Fluorinated Silicate Glass). The higher electromigration resistance of interconnects passivated by FOX can be best explained by their lower stress and vacancy concentration levels than the case for FSG. It was also proposed that lower levels of stress and vacancy concentration in the longer reservoir could partially contribute to the better electromigration reliability of interconnect with the longer reservoir.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L6.24.1
Copyright
Copyright © Materials Research Society 2002

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References

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