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Effects of the Concentration of Ga on Junction Formation in Thin-film ZnO/CdS/CuInXGal-XSe2 /Mo Photovoltaic Devices

Published online by Cambridge University Press:  10 February 2011

R. J. Matson ,
M. A. Contreras ,
J. R. Tuttle ,
A. B. Swartzlander ,
P. A. Parilla  and
R. Noufi
R. J. Matson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
M. A. Contreras
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
J. R. Tuttle
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
A. B. Swartzlander
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
P. A. Parilla
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
R. Noufi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

Charge-collection microscopy (CCM)—commonly known as electron-beam-induced current [EBIC] microscopy—in a scanning electron microscope (SEM) was used to obtain charge-collection efficiency profiles of cleaved thin-film ZnO/CdS/CuInXGal-XSe2/Mo photovoltaic devices on glass substrates, with x varied between 0 and 100%. We observed considerable variation in the EBIC peak position, the uniformity (between and within devices), and overall charge-collection profile of the junction as a function of Ga concentration. Whereas using only CuInSe2 (CIS) absorber material results in a rather wide and buried junction in the CIS, the systematic addition of Ga to the p-CuInSe2 matrix affects the conductivity type of the material, thereby creating an increasingly abrupt, uniform, and shallow junction near the heteroface. Although the substitution of Ga for In improves overall device performance up to ∼ X=25% and the Voc continues to improve, the Jsc, FF, and device efficiency degrade with additional Ga.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 183
Copyright
Copyright © Materials Research Society 1996

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