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Effects of Reflective Surfaces on Silicon Emissivity and Temperature Measurements

Published online by Cambridge University Press:  10 February 2011

H. Xu  and
J. C. Sturm
H. Xu
Affiliation:
Department of Electrical Engineering, Princeton University, NJ 08544
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, NJ 08544
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Abstract

The effects of front-side reflective surfaces on the emissivity and temperature measurement of silicon wafers in a Rapid Thermal Processing chamber with backside heating are examined through optics modeling. Two schemes are contrasted. In (1), the pyrometry detector looks at the back-side of the wafer; in (2), it looks at the front-side of the wafer. In both cases, the temperature errors occur when the reflector's reflectivity deviates from unity. However, the error dependence on the reflector reflectivity exhibits interesting differences in these two schemes. Under the working conditions proposed in this paper, a non-ideal reflector introduces a bigger temperature error in the “backside-detector” scheme than in the “front-detector” scheme. Practical implications of these results are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 297
Copyright
Copyright © Materials Research Society 1996

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