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Effects of Process Tube Position on Properties of Graphene Layers

Published online by Cambridge University Press:  29 August 2012

Zafer Mutlu ,
Miroslav Penchev ,
Isaac Ruiz ,
Hamed Hosseini Bay ,
Shirui Guo ,
Mihrimah Ozkan  and
Cengiz S. Ozkan
Zafer Mutlu
Affiliation:
Department of Materials Science and Engineering, University of California-Riverside, Riverside, CA, 92521, USA.
Miroslav Penchev
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA, 92521, USA
Isaac Ruiz
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA, 92521, USA
Hamed Hosseini Bay
Affiliation:
Department of Mechanical Engineering, University of California-Riverside, Riverside, CA, 92521, USA
Shirui Guo
Affiliation:
Department of Chemistry, University of California-Riverside, Riverside, CA, 92521, USA
Mihrimah Ozkan
Affiliation:
Department of Electrical Engineering, University of California-Riverside, Riverside, CA, 92521, USA
Cengiz S. Ozkan
Affiliation:
Department of Materials Science and Engineering, University of California-Riverside, Riverside, CA, 92521, USA. Department of Mechanical Engineering, University of California-Riverside, Riverside, CA, 92521, USA
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Abstract

Graphene, with unique electrical, optical and mechanical properties is a promising material in industrial applications, such as batteries, supercapacitors, transistors and semiconductor devices. These potential applications of graphene have motivated the development of large-scale synthesis of graphene on copper substrates by chemical vapor deposition (CVD). To enable practical applications of large-area, high quality graphene layers at the centimeter and wafer scales, process control needs to be implemented for optimizing the morphology and electrical properties and enable repeatable growth-cycle of graphene layers for process-line implementation. Here we investigate the effects of process quartz-tube position on the structural properties of graphene. Furthermore, we describe a procedure for process optimization of the growth parameters. Graphene is grown on copper foils by CVD, and transferred to the SiO2/Si and glass substrates. The detailed characterization of the graphene layers are conducted using Raman spectroscopy, optical microscopy (OM), scanning electron microscopy (SEM) and UV-vis spectroscopy. The experimental results show that the position of copper foil into the quartz tube plays a significant role in the Raman features of the graphene, and influences the optical, morphology and surface properties of graphene layers. We believe that these results will be useful for determining the optimum processing conditions of high quality graphene layers at the centimeter and wafer scales.

Keywords

chemical vapor deposition (CVD) (deposition)Raman spectroscopystructural
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 57 - 62
Copyright
Copyright © Materials Research Society 2012

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