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Effects of Metal Buffer Layer on the Epitaxial Growth of YBa2Cu3O7-y. Superconducting Films by Dipping-Pyrolysis Process

Published online by Cambridge University Press:  15 February 2011

T. Manabe ,
I. Yamaguchi ,
S. Nakamura ,
W. Kondo ,
S. Mizuta  and
T. Kumagai
T. Manabe
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305 JAPAN
I. Yamaguchi
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305 JAPAN
S. Nakamura
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305 JAPAN
W. Kondo
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305 JAPAN
S. Mizuta
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305 JAPAN
T. Kumagai
Affiliation:
National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305 JAPAN
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Abstract

Superconducting Yba2Cu3O7 -x(YBCO) films were prepared by dipping-pyrolysis process on SrTiO3 (001) or on MgO (001) substrates covered with a metal (Au or Ag) buffer layer, and the effects of these metal layers on the growth of YBCO films were investigated. Epitaxial growth of YBCO was found to be suppressed by the Au buffer layer, which crystallized to exhibit (111) orientation, after heat treatment at 700°C and higher. On the other hand, epitaxial YBCO films were obtained starting with Ag buffer layer by heat treatment at 700°C and higher, after which most of Ag was accumulated to particles. It was also found that the annealing temperature required for the epitaxial growth of YBCO films on MgO was lowered to 850°C by adopting the Ag buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 381
Copyright
Copyright © Materials Research Society 1996

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