Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-23T03:21:31.834Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Material Properties in Amorphous Silicon Color Detectors

Published online by Cambridge University Press:  15 February 2011

D. Caputo ,
L. Colalongo ,
F. Irrera ,
F. Lemmi ,
F. Palma  and
M. Tucci
D. Caputo
Affiliation:
Dept. of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Roma, Italy
L. Colalongo
Affiliation:
Department of Electronic I.S., University of Bologna, Piazza Risorgimento, Bologna, Italy
F. Irrera
Affiliation:
Dept. of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Roma, Italy
F. Lemmi
Affiliation:
Xerox Parc, Palo Alto (CA)
F. Palma
Affiliation:
Dept. of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Roma, Italy
M. Tucci
Affiliation:
ENEA, Research Centre, Località Granatello, 80055, Portici, Napoli, Italy
Get access

Abstract

In this work we study the effects of material properties on the reading process of color detectors by using a two dimensional simulator for the transient regime. In particular, starting from the potential and charge distribution in the device, we describe effects of the density of defects on the self-bias process. Results show the possibility to engineer materials in order to optimize response speed of the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 845
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cesare, G. de, Irrera, F., Lemmi, F., Palma, F., Appl. Phys. Lett., 66, 1178, (1996).Google Scholar
2. Masini, G., Cesare, G. de, Palma, F., J. Appl. Phys. 77, 1133, (1995).Google Scholar
3. Weisfield, R. L. in Amorphous Silicon Technology, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E.A. (Mat. Res. Soc. Symp. Proc. 258, Pittsburgh 1992) p. 1105–1114.Google Scholar
4. Irrera, F., Lemmi, F., Palma, F., IEEE-Trans. El. Devices, 44, 1410, (1997).Google Scholar
5. Irrera, F., Lemmi, F., Palma, F., J. Non-cryst. Solids, 227–230, 1340 (1998).Google Scholar
6. Irrera, F., Lemmi, F., Palma, F., Diotallevi, M. in Amorphous and Microcrystalline Silicon Technology edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., Schiff, S. Wagner (Mat. Res. Soc. Symp. Proc. 507, Pittsburgh 1998) p. 309–314.Google Scholar
7. Baccarani, G., Guerrieri, R., Ciampolini, P., Rudan, M., Proc.Conf. Nasecode IV, editor Miller, J.J. H., 3, (1985).Google Scholar