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Effects of Ion Dose on the Morphology and Crystallization of Amorphous Germanium

Published online by Cambridge University Press:  25 February 2011

L.M. Wang ,
R.C. Birtcherand  and
L.E. Rehn
L.M. Wang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
R.C. Birtcherand
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
L.E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

1.5 MeV Kr+ irradiation of polycrystalline Ge at room temperature, and subsequent annealing were carried out with in situ TEM observations. After a Kr+ dose of 1.2x1014 ions/cm2, Ge in the electron transparent region was completely amorphized. Continuous irradiation of the amorphized Ge resulted in a high density of small cavities. These cavities, first observed after 7x1014 ions/cm2 with an average diameter of ∼3 nm, grew into large (∼50 nm) irregular-shaped holes, transforming the irradiated Ge into a sponge-like material after 8.5x1015 ions/cm2. The crystallization temperature and the morphology of the crystallized Ge after annealing were found to be dependent on the Kr+ dose. The sponge-like structure was retained after crystallization at ∼600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 659
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Wilson, I.H., J. Appl. Phys. 53, 1698 (1982).Google Scholar
2 Appleton, B.R., Holland, O.W., Narayan, J., Schow III, O.E., Williams, J.S., Short, K.T. and Lawson, E.M., Appl. Phys. Lett. 41, 711 (1982).Google Scholar
3 Holland, O.W., Appleton, B.R. and Narayan, J., J. Appl. Phys. 54, 2295 (1983).Google Scholar
4 Appleton, B.R., Holland, O.W., Poker, D.B., Narayan, J. and Fathy, D., Nucl. Instrum. Methods B7/8. 639 (1985).Google Scholar
5 Chang, B.T.A. and Li, J.C.M., Scripta Met. 11, 933 (1977).Google Scholar
6 Schimansky, F.P., Gerling, R., Wagner, R., Mater. Sci. Eng. 97, 173 (1988).Google Scholar
7 Birtcher, R.C., Allen, C.W., Rehn, L.E. and Hofman, G.L., J. Nucl. Mater. 152, 73 (1988).Google Scholar
8 Weber, W.J., Matzke, H.J., Radiat. Eff. 22, 93 (1986).Google Scholar
9 Chaki, T.K. and Li, J.C.M., J. Nucl. Mater. 140, 180 (1986).Google Scholar
10 Gerasimov, A.I., Mikheeva, E.V., Pavlov, P.V., Tetel'baum, D.I., Phys. and Chem. Mater. Treat. 18, 173 (1984).Google Scholar
11 Kestel, B.J., Ultramicroscopy 9, 379 (1982).Google Scholar
12 Taylor, A., Allen, C.W. and Ryan, E.A., Nucl. Instrum. Methods B24/25. 598 (1987).Google Scholar
13 Corbett, J.W., Electron Radiation Damage in Semiconductors and Metals (Academic, New York, 1966), p. 134.Google Scholar
14 Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Methods 124, 257 (1980).Google Scholar
15 Hofman, G.L., J. Nucl. Mater. 140, 256 (1986).Google Scholar
16 Wang, L.M. and Birtcher, R.C., Appl. Phys. Lett. 55 (1989), in press.Google Scholar
17 Lannoo, M., Bourgoin, J.C., Point Defects in Semiconductors I. Theoretical Aspects (Springer, Berlin, Heidelberg, New York 1981).Google Scholar