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The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs

Published online by Cambridge University Press:  25 February 2011

Seemi Kazmi ,
Roman V. Kruzelecky  and
David A. Thompson
Seemi Kazmi
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Roman V. Kruzelecky
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
David A. Thompson
Affiliation:
Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
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Abstract

Ni/Ge/Au and Ni/Ge/Pd contacts have been made on 1018 cm-3 n-type GaAs. The contacts were subjected to ion beam mixing through the metallization using 70-130 keV Se+ ions and subsequently subjected to rapid thermal annealing (RTA). These are compared with unimplanted contacts produced by RTA techniques on the same substrate. The specific contact resistance ,pc, has been measured for the two systems. In addition, the contacts have been studied using Auger depth profiling and SEM studies have been used to determine surface morphology. Values of pc ∽ 10-6 -10-7 ohm-cm2 have been measured. It is observed that ion beam mixing or the addition of a Ti overlayer (to the Ni/Ge/Au) improves the contact morphology.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 351
Copyright
Copyright © Materials Research Society 1990

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References

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