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The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

H. Yang ,
H Niimi ,
Y. Wu  and
G. Lucovsky
H. Yang
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
H Niimi
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Y. Wu
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Mesarjian et al. were the first to recognize the effects of suboxide interfacial transition regions at Si-SiO2 interfaces on tunneling oscillations in the Fowler-Nordheim regime. This paper extends these ideas to the direct tunneling regime and focuses on differences in interfacial transition regions between Si-SO2 interfaces with, and without monolayer level interface nitridation. Tunneling currents in both the direct and Fowler-Nordheim tunneling regimes are reduced by monolayer level interface nitridation for PMOS and NMOS devices with the same oxide-equivalent thickness. This paper develops a modified barrier layer model based on analysis of XPS results that accounts for these reductions in current in the direct tunneling regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 241
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] National Roadmap for Semiconductor Technology, (SIA, Santa Clara, CA, 1997).Google Scholar
[2] Parker, C., Lucovsky, G. and Hauser, J., IEEE Electron Device Letters 19, 106 (1998).10.1109/55.663529Google Scholar
[3] Wu, Y. and Lucovsky, G., IEEE Electron Device Letters 19, 367 (1998).10.1109/55.720188Google Scholar
[4] Shi, Y., Wang, X., and Ma, T.P., IEEE Trans. on Electron Devices 46, 362 (1999).10.1109/16.737445Google Scholar
[5] Song, S.C., Luan, H.F., Chen, Y.Y., Gardner, M., Fulford, J., Allen, M. and Kwong, D.M., IEDM Tech. Dig. 375, (1998).Google Scholar
[6] Guo, X. and Ma, T.P., IEEE Electron Device Letters 19, 207 (1998).Google Scholar
[7] Niimi, H., Yang, H.Y. and Lucovsky, G., in Characterization and Metrology for ULSI Technology: 1998 International Conference, ed. by Seiler, D.G., Diebold, A.C., Bullis, W.M., Shaffner, T.J., McDonald, R. and Walters, E.J. (The American Institute of Physics, Woodbury, NY 1998), p. 273.10.1063/1.56894Google Scholar
[8] Lin, H.C., Ying, J.F., Yamanaka, T., Fang, S. J. and Helms, C.R., J. Vac. Sci.Tech A 15, 790 (1997).10.1116/1.580709Google Scholar
[9] Maserjian, J. and Zamani, N., J. Appl. Phys. 53, 559 (1982).10.1063/1.329919Google Scholar
[10] Keister, J.W., Rowe, J.E., Kolodzie, J.J., Niimi, H., Tao, N-S., Madey, T.E. and Lucovsky, G., submitted to J. Vac. Sci. Technol. A 17 (1999).Google Scholar
[11] Niimi, H. and Lucovsky, G., submitted to J. Vac. Sci. Technol. A 17 (1999).Google Scholar
[12] Lucovsky, G., Niimi, H., Koh, K, Lee, D.R. and Jing, Z., The Physics of SiO2 and Si-Si02 Interfaces- 3, ed. Massoud, H.Z., Poindexter, E.H. and Helms, C.R. (The Electrochemical Society, Pennington, NJ, 1996), p. 441.Google Scholar
[13] Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., and Yang, H., J. Vac. Sci. Tech. B 15, 1075 (1997).10.1116/1.589417Google Scholar
[14] Chen, X. and Gibson, J.M., Appl. Phys. Lett. 70, 1462 (1997).10.1063/1.118562Google Scholar
[15] Yang, H. Y., Niimi, H., and Lucovsky, G., J. Appl. Phys. 83, 2327 (1998).10.1063/1.366976Google Scholar
[16] Vogel, E.M., Ahmed, K.Z., Hornung, B. Henson, W.K., McLarty, P.K., Lucovsky, G., Hauser, J.R. and Wortman, J.J., IEEE Trans. Elec. Dev. 45, 1350 (1998).10.1109/16.678572Google Scholar