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Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Jin Jang ,
Tae Gon Kim ,
Song Ok Koh ,
Hyon Kyun Song ,
Kyu Chang Park ,
Moon Hyun Chung  and
Sung Chul Kim
Jin Jang
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Tae Gon Kim
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Song Ok Koh
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Hyon Kyun Song
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Kyu Chang Park
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Moon Hyun Chung
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
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Abstract

We studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 775
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Shimizu, I., Hanna, J. and Shirai, H., Mat. Res. Soc. Symp. Proc. 192, 64(1990).CrossRefGoogle Scholar
2. Shirai, H.. Das, D., Hanna, J. and Shimizu, I., in Technical Digest of the International PVSEC-5 (Kyoto, Japan, 1990).Google Scholar
3. Das, D., Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys. 30, L239(1991).Google Scholar
4. Shirai, H., Hanna, J. and Shimizu, I., To be published.Google Scholar
5. Asano, A., Appl. Phys. Lett. 56, 533(1990).CrossRefGoogle Scholar
6. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81(1978).CrossRefGoogle Scholar