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Effects of Excitation Frequency and H2 Dilution on Cluster Generation in Silane High-Frequency Discharges

Published online by Cambridge University Press:  01 February 2011

Masaharu Shiratani ,
Kazunori Koga ,
Atsushi Harikai ,
Takanori Ogata  and
Yukio Watanabe
Masaharu Shiratani
Affiliation:
Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
Kazunori Koga
Affiliation:
Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
Atsushi Harikai
Affiliation:
Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
Takanori Ogata
Affiliation:
Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
Yukio Watanabe
Affiliation:
Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
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Abstract

Reduction of cluster amount in silane discharges is the key to decreasing microstructure parameter Rα of a-Si:H films deposited with the discharges. The cluster amount is found to be reduced more than one order of magnitude using 60 MHz discharges instead of 28 MHz ones or using H2 dilution of an H2/SiH4 ratio of 5. The cluster-suppressed plasma CVD using 60 MHz discharges realizes deposition of a-Si:H films of Rα~ 0 at a fairly high rate of 0.55 nm/s. Moreover, a downstream cluster collection method of high sensitivity has been developed for detecting a small amount of clusters formed under deposition conditions of Rα < 0.01.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A9.5
Copyright
Copyright © Materials Research Society 2003

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