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Effects of Curing Time on Properties of Spin-On Glass as Low-Temperature Insulator

Published online by Cambridge University Press:  14 February 2013

Miguel A. Dominguez ,
Pedro Rosales ,
Alfonso Torres  and
Mario Moreno
Miguel A. Dominguez
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Pedro Rosales
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Alfonso Torres
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
Mario Moreno
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, C.P. 72840, Mexico.
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Abstract

In this work, we report the effects of curing time on properties of SiO2 films produced from Spin-On Glass (SOG) diluted with H2O and cured at 200°C. The electrical characterization showed that the insulator breakdown field for the films produced from SOG diluted with H2O with 1 Hr of curing time was approximately 5 MV/cm while for 6.5 Hrs of curing time the breakdown field was 21 MV/cm. Also, the refractive index and surface roughness were improved with longer curing time.

Keywords

dielectric propertiesinfrared (IR) spectroscopythin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1436: Symposium K – Advanced Materials and Processes for Systems-on-Plastic , 2012 , mrss12-1436-k05-01
Copyright
Copyright © Materials Research Society 2012

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References

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