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Effects of Confinement on Plastic Deformation in Passivated Al Films

Published online by Cambridge University Press:  21 February 2011

S.G.H. Anderson ,
I.-S. Yeo ,
P.S. Ho ,
S. Ramaswami  and
R. Cheung
S.G.H. Anderson
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
I.-S. Yeo
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
P.S. Ho
Affiliation:
Materials Laboratory for Interconnect and Packaging, University of Texas at Austin, BRC/MER Mail Code 78650, Austin, TX 78758-1100
S. Ramaswami
Affiliation:
Advanced Micro Devices, 901 Thompson Place, P.O. Box 3453, Sunnyvale, CA 94088-3000
R. Cheung
Affiliation:
Advanced Micro Devices, 901 Thompson Place, P.O. Box 3453, Sunnyvale, CA 94088-3000
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Abstract

Wafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AISiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AISiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 261
Copyright
Copyright © Materials Research Society 1993

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References

1. Stoney, G.G., Proc. R. Soc. London Ser. A 82, 172 (1909).Google Scholar
2. Hoffman, R.W., in Physics of Thin Films, Hass, G. and Thun, R.E., Eds. (Academic Press, New York, 1966), Vol. 3, p. 211.Google Scholar
3. Liu, H.C. and Murarka, S.P., J. Appl. Phys. 72, 3458 (1992).CrossRefGoogle Scholar
4. Feng, Z-C. and Liu, H-D., J. Appl. Phys. 54, 83 (1983), and references contained therein.CrossRefGoogle Scholar
5. Townsend, P.H., Barnett, D.M. and Brunner, T.A., J. Appl. Phys. 62, 4438 (1987).CrossRefGoogle Scholar
6. Flinn, P.A., Gardner, D.J. and Nix, W.D., IEEE Trans. Electron Devices ED–34, 689 (1987).CrossRefGoogle Scholar
7. Hu, S.M., J. Appl. Phys. 70, R53 (1991), and references contained therein.CrossRefGoogle Scholar
8. Tezaki, A., Mineta, T., Egawa, H., and Noguchi, T., IEEE Int. Reliability Phys. Symp. 1990, p. 221.Google Scholar
9. Flinn, P.A. and Chiang, C., J. Appl. Phys. 67, 2927 (1990).CrossRefGoogle Scholar
10. Moske, M.A., Ho, P.S., Mikalsen, D.J., Cuomo, J.J. and Rosenberg, R., Mat. Res. Soc. Symp. Proc. 203, 77 (1991).CrossRefGoogle Scholar
11. Korhonen, M., Paszkiet, C., Black, R.D., and Li, C.-Y., Scripta Met. 24, 2297 (1990).CrossRefGoogle Scholar
12. Doerner, M.F., Gardner, D.S. and Nix, W.D., J. Mater. Res. 1, 845 (1986).CrossRefGoogle Scholar
13. Ventkatramen, R., Bravman, J.C., Nix, W.D., Davies, P.W., Flinn, P.A. and Fraser, D.B., J. Electron. Mater. 19, 1231 (1990).CrossRefGoogle Scholar
14. Venkatraman, R. and Bravman, J.C., J. Mater. Res. 7, 2040 (1992).CrossRefGoogle Scholar
15. Chen, S.T., Yang, C.H., Faupel, F. and Ho, P.S., J. Appl. Phys. 64, 6690 (1988).CrossRefGoogle Scholar
16. Flinn, P.A., in Stress-Induced Phenomena in Metallization, Li, C.-Y., Totta, P., and Ho, P.S., Eds. (American Institute of Physics, New York, 1992), p. 73.Google Scholar
17. Draper, B.L. and Hill, T.A., J. Vac. Sci. Technol. B9, 1956 (1991).CrossRefGoogle Scholar
18. Moske, M.A., Lewis, J.E., and Ho, P.S., ANTEC '91, p. 1731.Google Scholar