Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-21T14:55:28.640Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films

Published online by Cambridge University Press:  31 January 2011

David C. Look ,
Kartik Ghosh  and
Kevin Leedy
David C. Look
Affiliation:
david.look@wright.edudavid.look@wpafb.af.mil, Wright State University, Semiconductor Research Center, Dayton, Ohio, United States
Kartik Ghosh
Affiliation:
KartikGhosh@missouristate.edu, Missouri State University, Physics, Astronomy and Materials Science, 901 S. National Avenue, Springfield, Missouri, 65897, United States, 417-836-6205, 417-836-6226
Kevin Leedy
Affiliation:
Kevin.Leedy@WPAFB.AF.MIL, Air Force Research Laboratory, AFRL/RYDD, 2241 Avionics Cir, Bldg 620, WAPFB, Ohio, 45433, United States, 9372551874
Get access

Abstract

Temperature-dependent Hall-effect measurements have been performed on three Ga-doped ZnO thin films of various thicknesses (65, 177, and 283 nm), grown by pulsed laser deposition at 400 °C and annealed at 400 °C for 10 min in Ar, N2, or forming-gas (5% H2 in Ar). The donor ND and acceptor NAconcentrations as a function of sample thickness and annealing conditions are determined by a new formalism that involves only ionized-impurity and boundary scattering. Before annealing, the samples are highly compensated, with ND = (2.8 ± 0.3) × 1020 cm-3 and NA = (2.6 ± 0.2) × 1020 cm-3. After annealing in Ar the samples are less compensated, with ND = (3.7 ± 0.1) × 1020 cm-3 and NA = (2.0 ± 0.1) × 1020 cm-3; furthermore, these quantities are nearly independent of thickness. However, after annealing in N2 and forming-gas, ND and NA are thickness dependent, partly due to depth-dependent diffusion of N2 and H, respectively.

Keywords

annealingelectrical propertiesHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H02-06
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Manami, T., Semicond. Sci. Technol. 20, S35 (2005).10.1088/0268-1242/20/4/004Google Scholar
2 Look, D.C., Mater. Sci. and Eng. B 80, 383 (2001).10.1016/S0921-5107(00)00604-8Google Scholar
3 Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., and Steiner, T., Prog. In Mater. Sci. 50, 293 (2005).10.1016/j.pmatsci.2004.04.001Google Scholar
4 Ozgur, U., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Dogan, S., Avrutin, V., Cho, S.J., and Morkoc, H., J. Appl. Phys. 98, 041301 (2005).10.1063/1.1992666Google Scholar
5 Look, D.C., Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).Google Scholar
6 Bayraktaroglu, B., Leedy, K., and Bedford, R., Appl. Phys. Lett. 93, 022104 (2008).10.1063/1.2959071Google Scholar
7 Look, D.C., Leedy, K.D., Tomich, D.H., and Bayraktaroglu, B., Appl. Phys. Lett., accepted for publication.Google Scholar
8 Tuomisto, F., Ranki, V., Saarinen, K., and Look, D.C., Phys. Rev. Lett. 91, 205502 (2003).10.1103/PhysRevLett.91.205502Google Scholar
9 Lavrov, E.V., Weber, J., Börrnert, F., Walle, C.G. Van de, and Helbig, R., Phys. Rev. B 66, 165205 (2002).10.1103/PhysRevB.66.165205Google Scholar
10 Limpijumnong, S., Li, X., Wei, S.-H., and Zhang, S.B., Physica B 376-377, 686 (2006).10.1016/j.physb.2005.12.172Google Scholar