Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-07T19:29:34.644Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of alloying elements on thermoelectric properties of ReSi1.75

Published online by Cambridge University Press:  01 February 2011

Min Wook Oh ,
Jia-Jun Gu ,
Kosuke Kuwabara  and
Haruyuki Inui
Min Wook Oh
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Jia-Jun Gu
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Kosuke Kuwabara
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Haruyuki Inui
Affiliation:
Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606–8501, Japan
Get access

Abstracts:

The thermoelectric properties as well as microstructure of binary and some ternary ReSi1.75 have been investigated. Binary ReSi1.75 exhibits a nice thermoelectric property as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along [001], although the ZT value along [100] is just moderately high. Mo substitution for Re in ReSi1.75 considerably increases the ZT value along [001] because of the decreased electrical resistivity, while the property improvement is not significant along [100]. On the other hand, Al and Ge substitutions for Si in ReSi1.75 considerably increase the ZT value along [100]. This is also because of the decreased electrical resistivity. When Al is added to ReSi1.75, the value of electrical resistivity is significantly reduced when compared to the binary counterpart and the temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S9.5
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Heinrich, A., Griebmann, H., Behr, G., Ivanenko, L., Schumann, J. and Vinzelberg, H., Thin Solid Films 381, 287 (2001).Google Scholar
2. Gu, J-J, Kuwabara, K., Tanaka, K., Inui, H., Yamaguchi, M., Yamamoto, A., Ohta, T. and Obara, H. in Defect Properties and Related Phenomena in Intermetallic Alloys, edited by George, E. P., Inui, H., Mills, M. J., and Eggeler, G., (Mater. Res. Soc. Proc. 753, Boston, Massachusetts, 2002) p. 501–506.Google Scholar
3. Sakamaki, Y., Kuwabara, K., Jiajun, Gu, Inui, H., Yamaguchi, M., Yamamoto, A. and Obara, H., Materials Science Forum 426–432, 1733–1738 (2003).Google Scholar
4. Siegrist, T., Hulliger, F. and Travaglini, G., J. Less-Common Met. 92, 119 (1983).Google Scholar
5. Neshpor, V. S. and Samsonov, G. V., Izv. Akad. Nauk S.S.S.R., Neorg. Mater. 1, 655 (1965) [Inorg. Mater. (U.S.S.R.) 1, 599 (1965)].Google Scholar
6. Neshpor, V. S. and Samsonov, G. V., Fiz. Met. Metalloved. 11, (4) 638 (1961) [Sov. Phys.-Phys. Met. Metallogr. 11, (4) 146(1961)].Google Scholar
7. Gottlieb, U., Lambert-Andron, B., Nava, F., Affronte, M., Laborde, O., Rouault, A. and Madar, R., J. Appl. Phys. 78, 3902 (1995).Google Scholar
8. Ivanenko, L., Shaposhnikov, V. L., Filonov, A. B., Migas, D. B., Behr, G., Schumann, J., Vinzelberg, H. and Borisenko, V. E., Microelectr. Eng. 64, 225 (2000).Google Scholar
9. Bhandri, C.M. and Rowe, D. M., in CRC Handbook of Thermoelectrics, edited by Rowe, D. M. (CRC, New York U. S. A., 1995) p. 44.Google Scholar