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Effects of a Ta Interlayer on the Titanium Silicide Reaction: C40 Formation and Higher Scalability of the TiSi2 Process.

Published online by Cambridge University Press:  21 March 2011

F. La Via ,
S. Privitera ,
F. Mammoliti  and
M.G. Grimaldi
F. La Via
Affiliation:
CNR-IMETEM, Stradale Primosole 50, Catania, Italy
S. Privitera
Affiliation:
INFM and Physics Department, Corso Italia 57, Catania, Italy
F. Mammoliti
Affiliation:
INFM and Physics Department, Corso Italia 57, Catania, Italy
M.G. Grimaldi
Affiliation:
INFM and Physics Department, Corso Italia 57, Catania, Italy
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Abstract

When a Ta layer is deposited at the Si/Ti interface a new phase has been detected, i.e. theTiSi2C40. The C40-C54 transformation kinetics and the film morphology are consistent with an increase of the nucleation density with respect to the C49-C54 transition. The activation energies for the nucleation rate (4.2±0.3 eV) and the growth velocity (4.0±0.4 eV) have been obtained from the in situ sheet resistance and the Transmission Electron Microscopy results. These results show that the process with a Ta layer at the Ti/Si interface has a greater scalability with respect to the standard TiSi2 process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K6.3
Copyright
Copyright © Materials Research Society 2001

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References

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