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Effective Medium Approach For Calculation of Linear and Nonlinear Properties of Porous Semiconductor Composites.

Published online by Cambridge University Press:  01 February 2011

Vladimir Kochergin  and
Helmut Föll
Vladimir Kochergin
Affiliation:
Lake Shore Cryotronics, Inc., Columbus, OH 43082, USA Tel. (614) 891 2243; Fax. (614) 818 1607; e-mail vkochergin@lakeshore.com
Helmut Föll
Affiliation:
Materials Science, Faculty of Engineering, Christian-Albrechts-University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
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Abstract

The general methodology of calculating linear and nonlinear properties of nanoporous and nanostructured semiconductor materials and composites is presented. A Maxwell-Garnett approach is generalized for the case of porous semiconductor materials composed of a number of differently oriented pore lattices. Specifically, the cases of electrochemically etched mesoporous silicon on (110)-oriented substrate and electrochemically-etched porous InP and GaAs materials on (100) substrates are considered. The observed optical anisotropy of mesoporous Si is explained. A biaxial anisotropy of the porous InP or GaAs material with crystallographic pores is predicted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 881: Symposium CC – Coupled Nonlinear Phenomena Modeling and Simulation for Smart, Ferroic and Multiferroic Materials , 2005 , CC3.1
Copyright
Copyright © Materials Research Society 2005

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