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Effect of Zn atom diffusion in the active layer of InGaAlP visible-LED investigated by the Piezoelectric Photothermal Spectroscopy

Published online by Cambridge University Press:  21 March 2011

Ryuji Ohno ,
Yoshihito Taiji ,
Shoichro Sato ,
Atsuhiko Fukuyama ,
Shigeru Shigetomi  and
Tetsuo Ikari
Ryuji Ohno
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1–1 Gakuen Kibanadai-nishi, Miyazaki 889–2192, Japan
Yoshihito Taiji
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1–1 Gakuen Kibanadai-nishi, Miyazaki 889–2192, Japan
Shoichro Sato
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1–1 Gakuen Kibanadai-nishi, Miyazaki 889–2192, Japan
Atsuhiko Fukuyama
Affiliation:
Department of Applied Physics, Miyazaki University, 1–1 Gakuen Kibanadai-nishi, Miyazaki 889–2192, Japan
Shigeru Shigetomi
Affiliation:
Department of Physics, Kurume University, 67 Asahityou, Kurume, Fukuoka 830–0011, Japan
Tetsuo Ikari
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University, 1–1 Gakuen Kibanadai-nishi, Miyazaki 889–2192, Japan
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Abstract

It has been reported that Zn atoms diffused from the Zn-doped p-InAlP cladding to the active layer in InGaAlP visible-light-emitting diodes cause a degradation of light output efficiency. A doping effect of the Zn atoms was then investigated using a Piezoelectric Photothermal Spectroscopy from a nonradiative transition point of view. The results indicate that the Zn-doping unexpectedly induces a decrease of the nonradiative component of the electron transitions above the band gap of the active layer. The experimental results are explained by considering that Zn doping cause the increase of both shallow and deep acceptor levels at the same time with the different rate for generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.28.1
Copyright
Copyright © Materials Research Society 2002

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