Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T14:29:06.506Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Thermally Induced Stresses on Electromigration Lifetime Of Near-Bamboo Interconnects

Published online by Cambridge University Press:  21 February 2011

M.A. Korhonen ,
P. BØrgesen ,
D.D. Brown  and
Che-Yu Li
M.A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
P. BØrgesen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
D.D. Brown
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
Get access

Abstract

Thermal stresses may affect significantly electromigration induced open failures in nearbamboo interconnect structures ending in W-vias. Based on a physical model, we investigate the thermal stress effects on void nucleation, on early failures due to grain boundary diffusion, and on longer term bulk diffusion dominated failures. It is shown that thermal stress is all important as far as early failures are concerned. In particular, during accelerated tests and service, the early failures, when occur, arise due to stress and current directed grain boundary diffusion along grain clusters. In the accelerated test, bulk diffusion dominated void growth at vias determines the long term failures while during service bulk diffusion contribution is usually negligibly small within time frames of practical interest. Because the dominant failure mechanisms change, the extrapolation from the accelerated tests to the service conditions is not straight-forward.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 121
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kwok, T. and Ho, P.S., in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P.S. (Noyes Publications, Park Ridge, NJ, 1988) p. 369 Google Scholar
2. Kahn, H. and Thompson, C.V., in Materials Reliability in Microelectronics II, edited by Thompson, C.V. and Lloyd, J.R. (MRS Proc. 225, Pittsburgh, PA, 1991), p. 15 Google Scholar
3. Rodbell, K.P., DeHaven, P.W., and Mis, J.D., in Materials Reliability in Microelectronics II edited by Thompson, C.V. and Lloyd, J.R. (MRS Proc. 225, Pittsburgh, PA, 1991), p.91 Google Scholar
4. Yue, J.T., Funsten, W.P., and Taylor, R.V., Proc. 23rd Int. Reliability Physics Symp. (IEEE, New York, 1985) p. 126 Google Scholar
5. Li, C.-Y., Black, R.D., and LaFontaine, W.R., Appl. Phys. Lett. 53, 31 1988)Google Scholar
6. Korhonen, M.A., Borgesen, P., and Li, C.-Y., in Stress Induced Phenomena in Metallization. edited by Li, C.-Y., Totta, P., and Ho, P. (AIP Proc. 263, NY, 1992), p. 29 Google Scholar
7. Li, C.-Y., Borgesen, P., and Sullivan, T.D., Appl. Phys. Lett. 59, 1464 (1991)Google Scholar
8. Korhonen, M.A., Borgesen, P., and Li, C.-Y., in Stresses and Mechanical Properties in Thin Films III, edited by Nix, W.D., Bravman, J.C., Arzt, E., and Freund, L.B. (MRS Proc. 239 Pittsburgh, PA, 1992), p.695 Google Scholar
9. Hu, C.K., Small, M.B., Rodbell, K.P., Stanis, C., Blauner, P., and Ho, P.S., “Electromigration failure due to interfacial diffusion in fine Al alloy lines”, 2nd Int. Workshop on Stress induced phenomena on metallization, Austin, Texas, 1993.CrossRefGoogle Scholar
10. Korhonen, M.A., Paszkiet, C.A., and Li, Che-Yu, J. Appl. Phys. 69, 8083 (1991)Google Scholar
11. Korhonen, M.A., LaFontaine, W.R., Borgesen, P., and Li, Che-Yu, J. Appl. Phys. 70, 6774 (1991)Google Scholar
12. Basa, C., MSc Thesis, Cornell University, 1990 Google Scholar
13. Blech, I.A. and Herring, C., Appl. Phys. Lett. 29, 131 (1976)Google Scholar
14. Korhonen, M.A., Borgesen, P., Tu, K.N. and Li, C.-Y., J. Appl. Phys. (1993)Google Scholar
15. Paszkiet, C.A., PhD Thesis, Cornell University, 1992 Google Scholar
16. Korhonen, M.A., Borgesen, P., and Li, Che-Yu, in “Materials Reliability in Microelectronics II”, edited by Thompson, C.V. and Lloyd, J.R. (MRS Proc. 265, Pittsburgh, PA, 1992), p. 39 Google Scholar
17. Carslaw, H.S. and Jaeger, J.C., Conduction of Heat in Solids (Clarendon Press, Oxford, UK, 1947)Google Scholar
18. Korhonen, M.A., Borgesen, P., Brown, D.D., and Li, C.-Y., submitted for publicationGoogle Scholar