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The Effect of Thermal Spike on the Ion Irradiation Induced Grain Growth

Published online by Cambridge University Press:  28 February 2011

K. H. Chae ,
J. H. Song ,
J. H. Joo ,
J. J. Woo ,
C. N. Whang ,
Y. J. Oh  and
H. J. Jung
K. H. Chae
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
J. H. Song
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
J. H. Joo
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
J. J. Woo
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
C. N. Whang
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
Y. J. Oh
Affiliation:
Korea Institute of Science and Technology, Seoul 130–650, Korea
H. J. Jung
Affiliation:
Korea Institute of Science and Technology, Seoul 130–650, Korea
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Abstract

The relation between the ion irradiation induced grain growth in bilayer system and the basic parameters involved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with thermodynamic properties such as cohesive energy ( ΔHc ) and heat of mixing( ΔHm ). The experimental results are in good agreement with the model for the grain growth based on the thermal spike induced atomic migration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 565
Copyright
Copyright © Materials Research Society 1992

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References

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