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The Effect of the Amorphous Silicon Alpha-Gamma Transition on Thin Film Transistor Performance

Published online by Cambridge University Press:  15 February 2011

I D French ,
S C Deane ,
D T Murley ,
J Hewett ,
I G Gale  and
M J Powell
I D French
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
S C Deane
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
D T Murley
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
J Hewett
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
I G Gale
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
M J Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
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Abstract

We have investigated the effect of depositing amorphous silicon (a-Si:H) under α and γ (or dusty) plasma conditions on hydrogen bonding and TFT performance. By infrared measurements three deposition regimes could be identified due to their distinctive absorption curves in the bending mode range of 800 to 900 cm'1. These corresponded to a films deposited below 300°C, γ films deposited below 300°C, and films deposited in either plasma condition at temperatures of 300°C and above. There was a correlation between the a-Si:H material regimes and TFT performance. When the deposition temperature was below 300°C the a-TFTs had a higher field effect mobility than γ-TFTs, but lower stability. For deposition temperatures of 300°C and above the films had more similar properties regardless of whether they were deposited under a or γ conditions. TFT mobilities were the same, but TFTs containing a-Si:H deposited under γ conditions were still more stable. These results show that the mobility and stability of TFTs are optimised for different growth conditions, and that the overall best conditions for TFT manufacture depends upon the specific application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 875
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Raynes, E P, Euro Display '96, 7 (1996)Google Scholar
[2] Powell, M J, French, I D, Hughes, J R, Bird, N C, Davies, O S, Glasse, C, and Curran, J E, Mater. Res. Soc. Proc. 258 1127 (1992)Google Scholar
[3] Tsukada, T, TFT/LCD, Liquid-Crystal Displays Addressed by Thin Film Transistors, (Gordon and Brach Publishers, Tokyo 1996) pp 18–26 Google Scholar
[4] Lebrun, H, Szydlo, N, Maurice, F, Borei, T, Stewart, R G, Weisbrod, S, Huq, R, SID 96 Digest, 677 (1996)Google Scholar
[5] Powell, M J, van Berkei, C, Franklin, A R, Deane, S C, Milne, W I, Phys Rev B, 45, 4160 (1992)Google Scholar
[6] Perrin, J, in Plasma Deposition of Amorphous Silicon-Based Materials, (Academic Press, London, 1995)pp179–188 Google Scholar
[7] Bouchoule, A, Physics World, 47 (August 1993)Google Scholar
[8] Lucovsky, G, Nemanich, R J, Knights, J C, Phys. Rev. B, 19, 2064 (1979)Google Scholar
[9] Godet, C, Cabarrocas, P R, J. Appl. Phys, 80, 1 (1996)Google Scholar
[10] John, P, Odeh, I M, Thomas, M J K, Solid State Commun, 41, 341 (1982)Google Scholar
[11] Tanenbaum, D M, Laracuente, A L, Gallagher, A, Appl. Phys. Lett, 68, 1705 (1996)Google Scholar
[12] Yang, L, Chen, L F, Mater. Res. Soc. Proc. 336 669 (1994)Google Scholar
[13] Deane, S C, Powell, M J, Mater. Res. Soc. Proc. 336, 757 (1994)Google Scholar