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Effect of Stoichiometry on the Ferroelectric Properties of (Pb1−xLax)TiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

I-Nan Lin ,
Cheng-Hsiung Lin ,
Yen-Hua Hsu ,
Han-Fang Teng  and
Hsiu-Fung Cheng
I-Nan Lin
Affiliation:
Department of Material Science and Engineering, Material Science Center, National Tsing-Hua University, Hsinchu, Taiwan300, R.O.C
Cheng-Hsiung Lin
Affiliation:
Department of Material Science and Engineering, Material Science Center, National Tsing-Hua University, Hsinchu, Taiwan300, R.O.C
Yen-Hua Hsu
Affiliation:
Department of Material Science and Engineering, Material Science Center, National Tsing-Hua University, Hsinchu, Taiwan300, R.O.C
Han-Fang Teng
Affiliation:
Department of Material Science and Engineering, Material Science Center, National Tsing-Hua University, Hsinchu, Taiwan300, R.O.C
Hsiu-Fung Cheng
Affiliation:
Department of Physics, National Taiwan Normal University, Taipei, Taiwan117, R.O.C
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Abstract

The (Pb1−xLax)TiO3, (PLT) thin films possessing good ferroelectric properties were successfully obtained by using metal-organic-decomposition (MOD) process, followed by furnace post-annealing at 600-700°C (60 min) or rapid thermal annealing (RTA) at 600-700°C (60 s). Excess Pb-species incorporated in precursors for compensating for the Pb-loss during MOD process results in pronounced modification on thin film's electrical properties. The leakage current is reduced from JL= 1 × 10−3 A/cm2 to 1 × 10−4 A/cm2 (at 400 kV/cm) and the remanent polarization is increased from Pr= 8.3 µ C/cm2 to 12.6 µC/cm2, when 10 mol% excess-Pb is added. On the other hand, larger La-content in PLT films results in more pronounced Pb-loss and induces larger leakage current, which significantly degrades the ferroelectric properties of the films. The best properties obtained for PLT films prepared by the MOD process are: Pr= 12.6 µC/cm2, Ec = 80 kV/cm and JL= 10−5 A/cm2 (at 400 kV/cm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 339
Copyright
Copyright © Materials Research Society 1999

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References

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