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The Effect of Sm, Eu and Yb on the Thermoelectric Properties of Th3P4,-Type Lanthanum Sulfide
Published online by Cambridge University Press: 25 February 2011
Abstract
The Th3P4-type lanthanum sulfides are n-type semiconductors and a continuous series of solid solutions is found between the compositions of La3S4 and La2S3. These materials are attractive for use in high temperature thermoelectric applications because of their high melting points, low thermal conductivities and their inherent ability to vary the electron concentration from a maximum of 6.02 × 1021 cm−3 for La3S4 to zero for La2S3 (i.e., self-doping). In this study, La3S4 compounds in which trivalent La has been partially substituted by divalent Sm, Eu or Yb (La3−xMxS4 , x = 0.1 to 0.9) have been prepared by the pressure assisted reaction sintering method and were found to have the Th3P4 structure. The thermoelectric properties (Seebeck coefficient and electrical resistivity) were measured as a function of temperature and the optimum composition was found for x between 0.2 and 0.3 in which the electrical power factor was a maximum at 1000°C.
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- Copyright © Materials Research Society 1987
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