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Effect of Recoil Implantation of Oxygen on Boron Enhanced Diffusion in Silicon

Published online by Cambridge University Press:  21 February 2011

D. Fan  and
R. J. Jaccodine
D. Fan
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
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Extract

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 79
Copyright
Copyright © Materials Research Society 1989

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References

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