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The Effect of Polysilicon Deposition and Doping Processes on Double-Poly Capacitors - Electrical and AFM Evaluation

Published online by Cambridge University Press:  22 February 2011

W. M. Paulson ,
L. H. Breaux ,
R. I. Hegde  and
P. J. Tobin
W. M. Paulson
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
L. H. Breaux
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
R. I. Hegde
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
P. J. Tobin
Affiliation:
Motorola, 3501 Ed Bluestein Boulevard, Austin, TX 78721
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Abstract

We have characterized the surface topography of silicon films from different deposition and doping process sequences using AFM and optical reflectivity. The resulting surface structures after deposition, doping, oxide growth, and oxide removal correlate with the electrical leakage currents and breakdown voltages of double polysilicon capacitors. As-deposited amorphous films had smoother surfaces than those deposited in the crystalline state. Gas-phase diffusion doping increases the surface roughness. Only the amorphous in situ doped films retained a smooth surface following oxidation, yielding low leakage capacitors with breakdown fields above 8 MV/cm. Surprisingly, implanted amorphous films exhibited the roughest interfaces, resulting in lower breakdown fields. This study has shown that AFM provides an effective, quick, non-destructive diagnostic technique for semiconductor processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 397
Copyright
Copyright © Materials Research Society 1994

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