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Effect of PLT Buffer Layers on the PZT Thin Films for Scaling-Down Ferroelectric Materials

Published online by Cambridge University Press:  26 February 2011

Li Dong Hua ,
Eun Sun Lee ,
Hyun Woo Chung ,
Byung Du Ahn  and
Sang Yeol Lee
Li Dong Hua
Affiliation:
donghua0213@yonsei.ac.kr, Yonsei University, Electrical and Electronic Engineering, 134 Shinchondong, Seodaemunku, Seoul, Korea, Seoul, Seoul, 120-749, Korea, Republic of, 82-2-2123-2776, 82-2-364-9770
Eun Sun Lee
Affiliation:
kuku0322@hotmail.com
Hyun Woo Chung
Affiliation:
kinnom97@hotmail.com
Byung Du Ahn
Affiliation:
bdahn@yonsei.ac.kr, Yonsei University, Electrical and Electronic Engineering, Korea, Republic of
Sang Yeol Lee
Affiliation:
sylee@yonsei.ac.kr
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Abstract

The Hysteresis characteristics of below 400 nm- thick Pb(Zr0.52Ti0.48)O3 (PZT) thin films grown on Pt (111) /Ti/SiO2/Si substrates have showed very poor with remanent polarization of 1∼3 μC/cm2 in our previous research. To study the further scaling-down, we introduced the method of our previous research that the (Pb0.72La0.28)Ti0.94O3 (PLT) buffer layers play an important role in enhancing the ferroelectric properties of the PZT thin films. As a result, the remanent polarization of 300 nm-thick PZT thin films with the 10 nm-thick PLT buffer layers have showed 32 μC/cm2 at applied voltage of 8 V and 24 μC/cm2 at applied voltage of 5 V. Inserted the PLT seed layers between the PZT thin films and substrate, the hysteresis characteristics of PZT thin films were improved a lot. The dielectric and leakage current properties of PZT thin films were also investigated.

Keywords

ferroelectricdielectric propertieselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-52
Copyright
Copyright © Materials Research Society 2006

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References

1 Takasu, H., Integr. Ferroelectr. 14, 1 (1997).Google Scholar
2 Kotechi, D. E., Integr. Ferroelectr. 16, 1 (1997).Google Scholar
3 Lee, E. S., Chung, H. W., Lim, S. H. and Lee, S. Y., Appl. Phys. Lett. 86, 032903 (2005).Google Scholar
4 Han, K. B., Kim, C. S., Jeon, C. H., Jhon, H. S., and Lee, S. Y., Mat. Sci. Eng. B. 109, 170 (2003).Google Scholar